Reticle focus measurement system using multiple interferometric beams

ABSTRACT

A first set of interferometric measuring beams is used to determine a location of a patterned surface of a reticle and a reticle focus plane for a reticle that is back clamped to a reticle stage. A second set of interferometric measuring beams is used to determine a map of locations of the reticle stage during scanning in a Y direction. The two sets of interferometric measuring beams are correlated to relate the reticle focal plane to the map of the reticle stage. The information is used to control the reticle stage during exposure of a pattern on the patterned surface of the reticle onto a wafer.

RELATED APPLICATIONS

[0001] This application is a divisional patent application of U.S. Ser.No. 10/235,499, filed Sep. 6, 2002, which is incorporated by referenceherein in its entirety.

BACKGROUND OF THE INVENTION

[0002] 1. Field of the Invention

[0003] The present invention relates to controlling a reticle stageduring exposure.

[0004] 2. Background Art

[0005] Historically, in lithographic tools a mounting side and apatterned side of a reticle are one and the same, establishing a reticlefocal plane at a plane of a reticle stage platen. Thus, knowledge ofstage position in six degrees-of-freedom (DOF) resulted in knowledge ofthe reticle patterned surface position in six DOF. The six DOF are X, Y,Z, Rx, Ry, and Rz, as shown in FIG. 1. However, mounting (or clamping)of an extreme ultra violet (EUV) reticle will almost certainly be to aback surface of the reticle (e.g., opposite from the patterned surface).Backside clamping results in a reticle focal plane position relative tothe reticle stage that is a function of reticle flatness, reticlethickness, and reticle thickness variation. Thus, in contrast to deepultra violet (DUV) systems, knowledge of the reticle stage position doesnot resolve where the pattern of the reticle is located in all six DOF.The out-of-plane DOF (Z, Rx, and Ry) cannot be easily determined due tothe thickness variation of the reticle. The position of the patternedside (opposite to the clamped side) of the reticle needs to be knownaccurately in all six DOF.

[0006] In almost all steppers and scanners three in-plane DOF (X, Y, andRz) are determined from typical stage metrology schemes usinginterferometers. However, three out-of-plane DOF (Z, Ry, and Rx) aremore difficult to measure. As discussed above, in an EUV tool, Z, Rx,and Ry have to be known with much higher accuracy than in previouslithography tools. The accuracy requirement stems from the need toposition the pattern on the reticle at a focal plane related to opticsof the lithography tool. Also, in some cases, optics are not telecentricat the reticle focal plane, which increases the need for accuratleydetermining the reticle position on the reticle stage to within six DOF.At the same time, it is critical to accurately maintain focus on thepattern on the reticle even though the reticle is not perfectly flat.Therefore, measuring the Z position and the out of plane tilts (Rx andRy) of the patterned side of the reticle in the EUV tool requires tightaccuracy.

[0007] Therefore, what is needed is a measuring system and method thatcan easily calibrate or correlate a reticle focal plane (for a backsideclamped reticle) to a reticle stage to allow tracking of a patternedsurface of a reticle's position in six DOF using reasonably conventionalstage metrology methods. A measuring system and method is also neededthat maps a reticle surface to surfaces on a reticle stage, which allowsfeedback for stage position to be based on surfaces on the stage insteadof surfaces on the reticle surface.

BRIEF SUMMARY OF THE INVENTION

[0008] Embodiments of the present invention provide a method includingthe steps of measuring location data of a pattern side of a reticlebased on a first set of interferometer measuring beams, measuring mapdata of a reticle stage during scanning of the reticle stage based on asecond set of interferometer measuring beams, and controlling thereticle stage during exposure of a wafer with a pattern on the patternside of the reticle based on the location data and the map data.

[0009] Further embodiments of the present invention provide a methodthat includes the steps of determining a reticle focal plane of abackside clamped reticle on a reticle stage using a firstinterferometer, determining positions of the reticle stage duringscanning of the reticle stage using a second interferometer, correlatingthe reticle focal plane to the positions of the reticle stage, andcontrolling the reticle stage during an exposure process based on thecorrelating step.

[0010] Still further embodiments of the present invention provide asystem including a moveable reticle stage holding a reticle, the reticlehaving a patterned side, a dual interferometer device that projects anddetects a first set of interferometer beams from the patterned side ofthe reticle and a second set of interferometer beams from the reticlestage, and a storage device that stores location data of the reticlemeasured by the first set of interferometer beams and map data of thereticle stage measured by the second set of interferometer beams.

[0011] Further embodiments, features, and advantages of the presentinventions, as well as the structure and operation of the variousembodiments of the present invention, are described in detail below withreference to the accompanying drawings. BRIEF DESCRIPTION OF THEDRAWINGS/FIGURES

[0012] The accompanying drawings, which are incorporated herein and forma part of the specification, illustrate the present invention and,together with the description, further serve to explain the principlesof the invention and to enable a person skilled in the pertinent art tomake and use the invention.

[0013]FIG. 1 shows an example orientation of a reticle according toembodiments of the present invention.

[0014]FIG. 2A shows a portion of a lithographic system or tool using adual interferometer according to embodiments of the present invention.

[0015]FIG. 2B shows a portion of a lithographic system using twointerferometers according to embodiments of the present invention.

[0016]FIGS. 3A and 3B show various configurations of a reticle and astage being measured according to various embodiments of the presentinvention.

[0017]FIG. 4 shows a flowchart of an overall measuring and controllingmethod for a lithography tool according to embodiments of the presentinvention.

[0018]FIG. 5 shows a flowchart of a measuring and controlling method fora reticle according to embodiments of the present invention.

[0019]FIG. 6 shows a flowchart of a measuring and controlling method fora reticle stage according to embodiments of the present invention.

[0020]FIG. 7 shows a portion of a lithographic system for measuringreticle and stage positions according to embodiments of the presentinvention.

[0021]FIG. 8 shows a portion of a lithographic system for measuringreticle and stage positions according to embodiments of the presentinvention.

[0022]FIG. 9A shows a portion of a lithographic system having a sideheld reticle according to embodiments of the present invention.

[0023]FIG. 9B shows a portion of a lithographic system having a frontheld reticle according to embodiments of the present invention.

[0024] The present invention will now be described with reference to theaccompanying drawings. In the drawings, like reference numbers indicateidentical or functionally similar elements. Additionally, the left-mostdigit(s) of a reference number identifies the drawing in which thereference number first appears.

DETAILED DESCRIPTION OF THE INVENTION

[0025] A first set of interferometric measuring beams is used todetermine a location of a patterned surface of a reticle and a reticlefocus plane for a reticle that is clamped (e.g., back, side, or frontclamped) to a reticle stage. A second set of interferometric measuringbeams is used to determine a map of locations of the reticle stageduring scanning in a Y direction. The two sets of interferometricmeasuring beams are correlated to relate the reticle focal plane to themap of the reticle stage. The information is used to control the reticlestage during exposure of a pattern on the patterned surface of thereticle onto a wafer.

[0026]FIG. 1 shows six degrees of freedom (DOF) for a reticle 100oriented in or parallel to an X-Y plane according to embodiments of thepresent invention. Again, the six DOF are X (along the X axis), Y (alongthe Y axis), Z (along the Z axis), Rx (rotation around the X axis), Ry(rotation around the Y axis), and Rz (rotation around the Z axis). Themore easily determinable DOF are the X, Y, and Rz based on a reticlestage's movements. In the embodiments discussed below, the DOF that arethe focus of the discussion below are Z and Ry. It is to be appreciatedthat any DOF can be determined by the appatarus and methods below if theorientation of the reticle 100 is changed.

[0027]FIG. 2A shows a portion 200 of a lithography tool according toembodiments of the present invention. Portion 200 includes a reticlestage 202 with a backside clamped reticle 204 that has a pattern 206.Although not drawn to scale, an interferometer system 208 includes twointerferometers 208A and 208B. Each interferometer 208A and 208Bprojects illuminating (I) light from illumination devices 210 towardsportion 200. In various embodiments, illumination devices 210 can belight sources, lasers, or the like with or without focusing or expandingoptical devices. A first set of interferometric measuring beams RSZ1 andRSZ2 from first interferometer 208A are reflected from first 212 andsecond 214 positions, respectively, on reticle 204. First position 212is adjacent a first side of pattern 206 and second position 214 isadjacent a second side of pattern 206. The reflected beams are receivedby detectors (D) 216. Signals corresponding to the detected beams arestored in a storage device 218 either before or after being processed bycontroller 220.

[0028] Again with reference to FIG. 2A, similarly, a second set ofinterferometric measuring beams RSZ3 and RSZ4 from second interferometer208B are reflected from first 222 and second 224 points, respectively,on reticle stage 202 and detected by detectors 216. Signals correlatingto the detected beams are then stored in storage 218. In the embodimentsshown and described above, all four measuring points, 212, 214, 222, and224 substantially lie along a line having a same Y value. In otherembodiments this may be required.

[0029]FIG. 2B shows an interferometer 208′ including a firstinterferometer 208A′ and a second interferometer 208B′ according toembodiments of the present invention.

[0030]FIGS. 3A and 3B show a first and second posisble position ofreticle 204 according to embodiments of the present invention. Tocalcuale the Z and Ry values, interferometric techniques are performedby the interferometer system 208 or 208′ and values are determined bycontroller 220 (FIG. 2A). Z can be determined by averging distances Z1and Z2 and Ry can be determined based on: ${Ry} = \frac{{Z2} - {Z1}}{L}$

[0031] In other embodiments, signals represent an interferometricmeasurement based on either intensity, phase, distance, or the like oftwo related beams (i.e., RSZ1 and RSZ2 or RSZ3 and RSZ4) being compared.A resulting signal from the comparison corresponds to paramaters (e.g.,position, orientation, tilt, etc.) of either reticle stage 202 orreticle 204.

[0032] With reference to FIG. 3A, the calculation of Z and Ry is asfollows for a reticle 204 that lies on or parallel to the Y axis. Inregards to Z, Z1 is approximately equal to Z2 because reticle 204 liesin or parallel to the Y-axis. Thus, Z≈Z1≈Z2. In regards to Ry, it issubstantially zero. This is because, if Z1≈Z2, then Z2−Z1≈0.

[0033] With reference to FIG. 3B, the calculation of Z and RY is asfollows for a reticle that is rotated Ry around the Y axis. In regardsto Z, it is equal to (Z1+Z2)/2, or the average of the two values. Inregards to Ry, it is equal to (Z2−Z1)/L, as is shown in the equationabove.

[0034] Therefore, in various embodiments, the four interferometer beamsRSZ1-RSZ4 are used to determine two DOF (Z and Ry) of the patternedsurface 206 of reticle 204. In these embodiments, Z is a direction aboutnormal to the patterned surface 206 and parallel to the lithographictool's optical axis. Also, in these embodiments, Ry is a rotation abouta scan axis of the reticle stage 202. As described above, twointerferometer beams (RSZ1 and RSZ2) reflect off of pattern surface 206of reticle 204 on either side of the pattern 206. These beams cannot beused during lithographic printing because the reticle stage 202 has totravel (in the scan Y direction shown as an arrow in FIGS. 2A and 2B)further than a physical length of the reticle 204. This causesdiscontinuous signals from these two interferometer beams (RSZ1 andRSZ2) as the beams run off of a reticle surface. This discontinuitymakes accurate stage control in Z and Ry difficult to nearly impossible.Also, other masking functions at the reticle focal plane (framing blades(not shown)) make the use of these two beams (RSZ1 and RSZ2) impracticalfor control of reticle stage 202 under lithography conditions becausethe blades will cut off the interferometer beams (RSZ1 and RSZ2) everytime a scan is made.

[0035] Also, in various embodiments, the other two interferometer beams(RSZ3 and RSZ4) are positioned to reflect off of surfaces on the reticlestage 202. There are numerous options for the configuration of thesereflective surfaces. In some embodiments, a first reflective surface(e.g., with point 222) of reticle stage 202 can be oriented in orparallel to the X-Y plane to give Z position feedback. Then, a secondreflective surface (e.g., with point 224) of reticle stage 202 can beoriented in or parallel to the X-Y plane. Alternate configurations arepossible where the second reflective surface of reticle stage 202 can beoriented in or parallel to a Y-Z plane. Then, the second surface yieldsRy stage position information. In further alternative embodiments,various other orientations exist where calculations would yield Z and Ryvalues. The lithographic tool would typically look at the differencebetween two interferometers (e.g., dual interferometer 210 orinterferometers 210A′ and 210B′) with separation in either the X or Zdirections, thus giving Ry information.

[0036] FIGS. 4-6 show flowcharts of methods 400, 500, and 600 accordingto embodiments of the present invention. A summary of those methodsfollows. After loading reticle 204 (and occasionally during calibrationor between calibrations once or periodically) onto reticle stage 202 thedata from RSZ1 and RSZ2 can be used to locate the patterned surface 206at a reticle focal plane established by projection optics (not shown) ofthe lithography tool or any other desired plane determined by machinesetup. Then, while reticle stage 202 is scanned in the Y direction sothat reticle 204 remains in the chosen plane, the values of RSZ3 andRSZ4 are recorded and stored as a map. When the lithography tool isready to do exposures, the data from the map will be used to control thereticle stage 202, and thereby the reticle 204, in Z and Ry so thatpattern 206 is always in the chosen plane. Thus, even if beams RSZ1 andRSZ2 are discontinuous due to running off of the reticle 204 at eitherend of the scans, the stage control is not compromised because thecontrol feedback is coming from beams RSZ3 and RSZ4. In anotherembodiment, beams RSZ1 and RSZ2 can be constantly monitored duringlithography to verify the map and to possibly do continuous updating ofthe map used for stage Z and Ry control. It is to be appreciated thatthere are other ways of determining stage position during scanning whilemaintaining pattern 206 of reticle 204 in a chosen plane, which are allcontemplated by the invention.

[0037]FIG. 4 depicts a flowchart of method 400 according to embodimentsof the present invention (steps 402-410). At step 402, a reticle (e.g.,reticle 204) is back clamped to a reticle stage (e.g., stage 202). Atstep 404, a reticle focal plane is determined based on a first set ofinterferometric measuring beams (e.g., RSZ1 and RSZ2). At step 406, amap of reticle stage locations is determined during scanning of thereticle stage based on a second set of interferometric measuring beams(e.g., RSZ3 and RSZ4). In step 408, the measured reticle focal plane iscorrelated to the map of the reticle stage. In step 410, the reticlestage is controlled based on the correlation during exposure of apattern on the reticle onto a wafer. The exposure is accomplishedthrough processes known in the art.

[0038]FIG. 5 depicts a flowchart of method 500 that can occur duringstep 406 according to embodiments of the present invention. At step 502,a first beam (e.g., RSZ1) is reflected from a location (e.g., point 212)adjacent a first side of a reticle pattern (e.g., pattern 206). At step504, a second beam (e.g., RSZ2) is reflected from a location (e.g.,point 214) adjacent a second side of the reticle pattern. At step 506,the two reflected beams are detected in an interferometer (e.g.,interferometer 208 or 208′). At step 508, an interferometric operationis performed (e.g., in controller 220) on the received signals todetermine a location of the reticle pattern, and thus the reticle focusplane. At step 510, location information is stored (e.g., in storage218). At step 512, which can be part of step 410, the locationinformation is used (e.g., by stage controller 228) to control a reticlestage (e.g., stage 202) during an exposure process.

[0039]FIG. 6 depicts a flowchart of a method 600 that can occur duringstep 408 according to embodiments of the present invention. At step 602,a reticle stage (e.g., stage 202) is scanned in a Y direction. At step604, a first measuring beam (e.g., RSZ3) is reflected off a point (e.g.,point 222) on the reticle stage that is parallel to or oriented in anX-Y plane. At step 606, a second measuring beam (e.g., RSZ4) isreflected off a point (e.g., point 224) on the reticle stage that isparallel to or oriented in the X-Y or Y-Z plane. At step 608, the firstand second measuring beams are detected by an interferometer (e.g.,interferometers 208 or 208′). At step 610, stage position information isdetermined (e.g., by processor 220) based on interferometric valuesgenerated by the interferometer. At step 612, a map is generated (e.g.,by controller 220) of the stage position during the scan based on theinterferometric values. At step 614, the map is stored (e.g., in storage218). At step 616, which can be part of step 410, data from the storedmap is used (e.g., by stage controller 228) to control the reticle stageduring an exposure process.

[0040]FIG. 7 shows a portion 700 of a lithography tool used to measurestage 202 and reticle 204 positions according to embodiments of thepresent invention. In this embodiment, although not shown, beamsRSZ1-RSZ3 and RSX1-RSX2 are produced by and detected by aninterferometer similar to 208 or 208′ discussed above, or any otherinterferometer. As discussed above, RSZ1 and RSZ2 are used to determinedcharacteristics about reticle 204 and RSZ3 is used to determine Z ofstage 202. RSX1 and RSX2 are used to determined both an X position ofstage 202 and Ry. Ry is determined by: ${Ry} = \frac{{X2} - {X1}}{L}$

[0041]FIG. 8 shows a portion 800 of a lithography tool used to measurestage 202 and reticle 204 positions according to embodiments of thepresent invention. Again, in this embodiment, although not shown, beamsRSZ1-RSZ5, RSY1-RSY3, and RSX1 are produced by and detected by aninterferometer similar to 208 or 208′ discussed above, or any otherinterferometer. This embodiment shows beams that can enabledetermination of all six DOF for stage 202 and/or reticle 204. BeamsRSZ1 and RSZ2 allow for Z and Ry of reticle 204 to be determined. BeamsRSZ1 and RSZ5 allows for Rx of reticle 204 to be determined. Beams RSZ3and RSZ4 allow for Z and Ry of stage 202 to be determined. Beam RSX1allows for X of stage 202 to be determined. Beam RSY1, RSY2, and/or RSY3allow for Y of stage 202 to be determined. Beams RSY2 and RSY3 allow forRz of stage 202 to be determined. Beams RSY1 and RSY3 allow for Rx ofstage 202 to be determined. These determination are made based on theabove formulas, similar formulas to the above, or any other knowninterferometric formulas.

[0042]FIG. 9A shows a portion 900 of a lithography tool according toembodiments of the present invention. Portion 900 includes reticle 204that is clamped at its sides to stage 902. In some embodiments, reticle204 can be coupled to a support device (e.g., a stiffener) 904 tocounteract any warping force on reticle 202. Beams RSZ1-RSZ4 can be usedas described above to determine Z and Ry of stage 902 and/or reticle204.

[0043]FIG. 9B shows a portion 920 of a lithography tool according toembodiments of the present invention. Portion 920 includes reticle 204that is front clamped to stage 922. In some embodiments, reticle 204 canbe coupled to support device 904 to counteract any warping force onreticle 202. Beams RSZ1-RSZ4 can be used as described above todetermined Z and Ry of stage 922 and/or reticle 204. Conclusion

[0044] While various embodiments of the present invention have beendescribed above, it should be understood that they have been presentedby way of example only, and not limitation. It will be apparent topersons skilled in the relevant art that various changes in form anddetail can be made therein without departing from the spirit and scopeof the invention. Thus, the breadth and scope of the present inventionshould not be limited by any of the above-described exemplaryembodiments, but should be defined only in accordance with the followingclaims and their equivalents.

What is claimed is:
 1. A system comprising: a moveable reticle stageholding a reticle, said reticle having a patterned side; a dualinterferometer device that projects and detects a first set ofinterferometer beams from said patterned side of said reticle and asecond set of interferometer beams from said reticle stage; and astorage device that stores location data of said reticle measured bysaid first set of interferometer beams and map data of said reticlestage measured by said second set of interferometer beams.
 2. The systemof claim 1, further comprising a controller that controls said reticlestage during exposure of a reticle pattern on a wafer based on saidstored map data and said stored location data.
 3. The system of claim 1,wherein said reticle is back clamped to said reticle stage.
 4. Thesystem of claim 1, wherein said reticle is side clamped to said reticlestage.
 5. The system of claim 1, wherein said reticle is front clampedto said reticle stage.
 6. The system of claim 1, wherein said dualinterferometer device comprises a single structure with twointerferometer sections.
 7. The system of claim 1, wherein said dualinterferometer device comprises two interferometers.